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| 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com princip al device types mje15031 geometry process details r0 (4- april 2005) process multiepitaxial mesa die size 120 x 145 mils die thickness 13 mils base bonding pad area 20 x 45 mils emitter bonding pad area 14 x 70 mils top side metalization al - 50,000? back side metalization cr / ni / ag - 10,000? gross die per 4 inch w afer 640 central semiconductor corp. tm process CP645 power transistor pnp, 8.0a power transistor chip
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